Experiment instructions for semiconductor components

Rectifier diodes

• Effect of the PN junction on diodes
• Characteristic curve representation of diodes of different semiconductor materials
• Single-pulse centre-point circuit M1
• Two-pulse bridge circuit B2

Z-diodes

• Forward-bias and reverse-bias characteristics of Z diodes
• DC voltage limiting with Z-diodes
• Series and reverse connection of Z diodes
• AC voltage limiting and overvoltage protection with Z-diodes
• Voltage stabilisation with Z-diodes
• Diodes with special properties
• Light emitting diodes

Bipolar transistors

• Testing the layering and rectifier behaviour of bipolar transistors
• Current distribution in the transistor and control effect of the base current
• The characteristic curves of the transistor
• Influence of the working resistance on the transistor properties

Unipolar transistors (junction field effect transistors)

• Testing the layering and rectifier behaviour of FETs
• Forward characteristic of the PN junctions of the gate in FETs
• Control effect of the gate in N-channel FETs
• Output characteristics of the FET

MOS-FET (IG-FET)

• Control effect of the gate for the self-locking MOS-FET
• Output characteristics of the self-locking MOS-FET

Unijunction transistor (UJT)

• Testing the inter-base path of the unijunction transistor
• Switching characteristics of the unijunction transistor
• Control characteristics of the unijunction transistor

Thyristors

• Thyristor diode (DIAC)
• Thyristor triode (thyristor)
• Bidirectional thyristor (TRIAC)

Experiment instructions ‘Semiconductor components’ (incl. CD-ROM)